Nexperia Transistor (BJT) - Discrete BC847C,215 SOT 23 No. of channels 1 NPN

Collector current: 100 mA; Collector cutoff current: 15 nA; Collector emitter voltage U(CEO): 45 V; Collector-emitter saturation voltage (max.): 400 mV; DC current gain (hFE): 420; DC current gain hFE - reference current: 2 mA; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): SOT 23; Manufacturer code (components): NEX; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 250 mW; Transit frequency f(T): 100 MHz; Type (transistors): NPN

Price: 0.05 from Conrad Electronic