Nexperia Transistor (BJT) - Discrete BC807-40,215 SOT 23 No. of channels 1 PNP

Collector current: -500 mA; Collector cutoff current: -100 nA; Collector emitter voltage U(CEO): -45 V; Collector-emitter saturation voltage (max.): -700 mV; DC current gain (hFE): 250; DC current gain hFE - reference current: -100 mA; DC current gain hFE - reference voltage: -1 V; Enclosure type (semiconductors): SOT 23; Manufacturer code (components): NEX; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 250 mW; Series (semiconductors): Technique automobile/AEC-Q101; Transit frequency f(T): 80 MHz; Type (transistors): PNP

Price: 0.07 from Conrad Electronic